Engelbrecht J.A.A., Janzén E., Henry A., Van Rooyen I.J.
Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031, South Africa; Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden; Fuel Performance and Design Department, Idaho National Laboratory, PO Box 1625, Idaho Falls, ID 83415-6188, United States
Engelbrecht, J.A.A., Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031, South Africa; Janzén, E., Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden; Henry, A., Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden; Van Rooyen, I.J., Fuel Performance and Design Department, Idaho National Laboratory, PO Box 1625, Idaho Falls, ID 83415-6188, United States
A layer-on-substrate model is used to obtain the infrared reflectance for 3C-SiC with a rough surface morphology. The effect of varying dielectric parameters of the "damaged layer" on the observed reflectivity of the 3C-SiC in the reststrahlen region is assessed. Different simulated reflectance spectra are obtained to those if the dielectric parameters of the "substrate" were varied. Most notable changes in the shape of the simulated reststrahlen peak are observed for changes in the high frequency dielectric constant, the phonon damping constant, the phonon frequencies and "thickness" of damaged surface layer. © 2013 Elsevier B.V.