Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing
Bulletin of Materials Science
Department of Physics, University of Pretoria, Pretoria, South Africa; Department of Mathematics, Science and Sports Education, University of Namibia, HP Campus, P/Bag 5507, Oshakati, Namibia
Rutherford backscattering spectrometry (RBS) analysis, carried out at various annealing temperatures, of a thin film of ruthenium on n-type four-hexagonal silicon carbide (4H-SiC) showed the evidence of ruthenium oxidation, ruthenium silicide formation and diffusion of ruthenium into silicon carbide starting from an anneal- ing temperature of 400°C. Ruthenium oxidation was more pronounced, and ruthenium and silicon interdiffusion was very deep after annealing at 800°C. Raman analysis of some samples also showed ruthenium silicide formation and oxidation. The Schottky barrier diodes showed very good linear capacitance-voltage characteristics and excel- lent forward current-voltage characteristics, despite the occurrence of the chemical reactions and interdiffusion of ruthenium and silicon at ruthenium-silicon-carbide interface, up to an annealing temperature of 800°C. © Indian Academy of Sciences.
Annealing; Backscattering; Capacitance; Current voltage characteristics; Oxidation; Raman spectroscopy; Ruthenium; Rutherford backscattering spectroscopy; Silicides; Silicon; Silicon carbide; Spectrometry; 4H-SiC; Annealing temperatures; Capacitance voltage characteristic; Electrical performance; Interface behaviour; Rutherford back-scattering spectrometry; Schottky contacts; Silicide formation; Schottky barrier diodes