Hall and thermoelectric evaluation of p-type InAs
Physica B: Condensed Matter
Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth, South Africa
This paper compares the galvanometric and thermoelectric evaluation of the electrical characteristics of narrow gap semiconductors. In particular, the influence of a surface inversion layer is incorporated into the analysis of the temperature-dependent Hall and thermoelectric measurements of p-type InAs. The temperature at which the Seebeck coefficient of p-type material changes sign is shown to be unaffected by the presence of degenerate conduction paths. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs. © 2009 Elsevier B.V. All rights reserved.
Acceptor density; Conduction paths; Direct determination; Electrical characteristic; InAs; Material change; Narrow-gap semiconductors; P-doping; P-type; Surface inversion layer; Temperature dependent; Thermoelectric effect; Thermoelectric effects; Thermoelectric measurements; Gyrators; Hall effect; Semiconducting indium; Semiconductor doping; Magnetic field effects